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Package Marking and Ordering Information
Device Marking
FDB045AN08A0
Device
FDB045AN08A0_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 P A, V GS = 0V
75
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 60V
V GS = 0V
V GS = r 20V
T C = 150 o C
-
-
-
-
-
-
1
250
r 100
P A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 P A
2
-
4
V
I D = 80A, V GS = 10V
-
0.0039 0.0045
r DS(ON)
Drain to Source On Resistance
I D = 37A, V GS = 6V
I D = 80A, V GS = 10V,
T J = 175 o C
-
-
0.0056 0.0084
0.008 0.011
:
Dynamic Characteristics
C ISS
C OSS
C RSS
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0V to 10V
-
-
-
6600
1000
240
92
-
-
-
138
pF
pF
pF
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 2V
V DD = 40V
I D = 80A
I g = 1.0mA
-
-
-
-
11
27
16
21
17
-
-
-
nC
nC
nC
nC
Switching Characteristics (V GS = 10V)
t ON
t d(ON)
Turn-On Time
Turn-On Delay Time
-
-
-
18
160
-
ns
ns
t r
t d(OFF)
t f
t OFF
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 40V, I D = 80A
V GS = 10V, R GS = 3.3 :
-
-
-
-
88
40
45
-
-
-
-
128
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I SD = 80A
I SD = 40A
I SD = 75A, dI SD /dt = 100A/ P s
I SD = 75A, dI SD /dt = 100A/ P s
-
-
-
-
-
-
-
-
1.25
1.0
53
54
V
V
ns
nC
Notes:
1: Starting T J = 25°C, L = 0.48mH, I AS = 50A.
2: Pulse Width = 100s
FDB045AN08A0_F085 Rev. A
www.fairchildsemi.com
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